ナノ構造解析学研究室

Publications

2023. 1. 1.

Original Papers

  1. Theory of the incommensurate-to-commensurate transition in long-period superlattices of A3B-type alloys
    Y. Koyama and M. Ishimaru
    Physical Review B 41, 8522-8525 (1990).
  2.  Structural transitions in superconducting oxides Ba-Pb-Bi-O
    Y. Koyama and M. Ishimaru
    Physical Review B 45, 9966-9975 (1992).
  3. Monte Carlo simulation of CuPt-type ordering in off-stoichiometric III-V semiconductor alloys
    M. Ishimaru, S. Matsumura, N. Kuwano, and K. Oki
    Journal of Applied Physics 77, 2370-2374 (1995).
  4. Kinetics of CuPt-type ordered phase formation in III-V semiconductor alloys during (001) epitaxial growth due to step flow
    M. Ishimaru, S. Matsumura, N. Kuwano, and K. Oki
    Physical Review B 51, 9707-9714 (1995).
  5. Diffuse scattering in partially ordered III-V semiconductor alloys
    M. Ishimaru, S. Matsumura, N. Kuwano, and K. Oki
    Physical Review B 52, 5154-5159 (1995).
  6. Application of empirical interatomic potentials to liquid Si
    M. Ishimaru, K. Yoshida, and T. Motooka
    Physical Review B 53, 7176-7181 (1996).
  7. Molecular-dynamics study on atomistic structures of liquid silicon
    M. Ishimaru, K. Yoshida, T. Kumamoto, and T. Motooka
    Physical Review B 54, 4638-4641 (1996).
  8. Microstructure of CuAu-I-type ordered phase in III-V semiconductor alloys grown on a (001) substrate
    M. Ishimaru, S. Matsumura, N. Kuwano, and K. Oki
    Physical Review B 54, 10814-10819 (1996).
  9. Recrystallization of MeV Si implanted 6H-SiC
    S. Harada, M. Ishimaru, T. Motooka, T. Nakata, T. Yoneda, and M. Inoue
    Applied Physics Letters 69, 3534-3536 (1996).
  10. Transmission electron microscopy studies of crystal-to-amorphous transition in ion implanted silicon
    M. Ishimaru, S. Harada, and T. Motooka
    Journal of Applied Physics 81, 1126-1130 (1997).
  11. Homogeneous amorphization in high-energy ion implanted Si
    T. Motooka, S. Harada, and M. Ishimaru
    Physical Review Letters 78, 2980-2982 (1997).
  12. Generation of amorphous silicon structures by rapid quenching: A molecular-dynamics study
    M. Ishimaru, S. Munetoh, and T. Motooka
    Physical Review B 56, 15133-15138 (1997).
  13. 融液からのシリコン結晶成長過程における不純物原子の挙動：炭素原子
    吉田　興、隈元　崇、石丸　学、本岡輝昭、森口晃治、新谷　昭
    日本結晶成長学会誌 24, 412-417 (1997).
  14. Behavior of impurity atoms during crystal growth from melted silicon: carbon atoms
    M. Ishimaru, S. Munetoh, T. Motooka, K. Moriguchi, and A. Shintani
    Journal of Crystal Growth 194, 178-188 (1998).
  15. Molecular-dynamics studies on defect formation processes during crystal growth of silicon from melt
    M. Ishimaru, S. Munetoh, T. Motooka, K. Moriguchi, and A. Shintani
    Physical Review B 58, 12583-12586 (1998).
  16. High-dose oxygen ion implantation into 6H-SiC
    M. Ishimaru, R.M. Dickerson, and K.E. Sickafus
    Applied Physics Letters 75, 352-354 (1999).
  17. Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide
    M. Ishimaru and K.E. Sickafus
    Applied Physics Letters 75, 1392-1394 (1999).
  18. Scanning transmission electron microscopy-energy dispersive x-ray/electron energy loss spectroscopy studies on SiC-on-insulator structures
    M. Ishimaru, R.M. Dickerson, and K.E. Sickafus
    Journal of the Electrochemical Society 147, 1979-1981 (2000).
  19. Ion-beam-induced spinel-to-rocksalt structural phase transformation in MgAl2O4
    M. Ishimaru, I.V. Afanasyev-Charkin, and K.E. Sickafus
    Applied Physics Letters 76, 2556-2558 (2000).
  20. Radiation tolerance of complex oxides
    K.E. Sickafus, L. Minervini, R.W. Grimes, J.A. Valdez, M. Ishimaru, F. Li, K.J. McClellan, and T.E. Hartmann
    Science 289, 748-751 (2000).
  21. Effect of heavy ion irradiation on near-surface microstructure in single crystals of rutile TiO2
    F. Li, P. Lu, M. Ishimaru, and K.E. Sickafus
    Philosophical Magazine B 80, 1947-1954 (2000).
  22. Surface morphology of ion-beam-irradiated rutile single crystals
    M. Ishimaru, Y. Hirotsu, F. Li, and K.E. Sickafus
    Applied Physics Letters 77, 4151-4153 (2000).
  23. On the stability of b-SiC with respect to chemical disorder induced by irradiation with energetic particles
    S. Grigull, M. Ishimaru, M. Nastasi, C.A. Zorman, and M. Mehregany
    Philosophical Magazine Letters 81, 55-61 (2001).
  24. Refractive indices of metastable and amorphous phases in Ne+-ion irradiated magnesium-aluminate spinel
    I.V. Afanasyev-Charkin, D.W. Cook, M. Ishimaru, B.L. Bennett, V.T. Gritsyna, J.R. Williams, and K.E. Sickafus
    Optical Materials 16, 397-402 (2001).
  25. 酸素イオン注入シリコンカーバイドにおける埋め込み絶縁層の構造解析
    石丸　学、大久保忠勝、弘津禎彦
    日本金属学会誌 65, 361-365 (2001).
  26. Molecular-dynamics study on atomistic structures of amorphous silicon
    M. Ishimaru
    Journal of Physics: Condensed Matter 13, 4181-4189 (2001).
  27. Comment on "Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms"
    M. Ishimaru
    Physical Review B 63, 237401-1-237401-3 (2001).
  28. Atomistic simulations of structural relaxation processes in amorphous silicon
    M. Ishimaru
    Journal of Applied Physics 91, 686-689 (2002).
  29. Atomistic structures of metastable and amorphous phases in ion-irradiated magnesium-aluminate spinel
    M. Ishimaru, Y. Hirotsu, I.V. Afanasyev-Charkin, and K.E. Sickafus
    Journal of Physics: Condensed Matter 14, 1237-1247 (2002).
  30. Interface formation and phase distribution induced by Co/SiC solid state reactions
    C.S. Lim, J.S. Ho, J.H. Ryu, K.H. Auh, I.-T. Bae, M. Ishimaru, and Y. Hirotsu
    Materials Transactions 43, 1225-1229 (2002).
  31. Structural relaxation of amorphous silicon carbide
    M. Ishimaru, I.-T. Bae, Y. Hirotsu, S. Matsumura, and K.E. Sickafus
    Physical Review Letters 89, 055502-1-055502-4 (2002).
  32. Electron microscopy study on amorphous Ge-Sb-Te thin film for phase change optical recording
    M. Naito, M. Ishimaru, Y. Hirotsu, and M. Takashima
    Japanese Journal of Applied Physics 42, L1158-L1160 (2003).
  33. Electron-beam-induced amorphization in SiC
    M. Ishimaru, I.-T. Bae, and Y. Hirotsu
    Physical Review B 68, 144102-1-144102-4 (2003).
  34. Molecular-dynamics study of structural and dynamical properties of amorphous Si-Ge alloys
    M. Ishimaru, M. Yamaguchi, and Y. Hirotsu
    Physical Review B 68, 235207-1-235207-7 (2003).
  35. アモルファスSi1-xGex合金構造の分子動力学シミュレーション
    山口允裕、石丸　学、弘津禎彦
    日本金属学会誌 68, 70-73 (2004).
  36. Local structure analysis of Ge-Sb-Te phase change materials using high-resolution electron microscopy and nanobeam diffraction
    M. Naito, M. Ishimaru, Y. Hirotsu, and M. Takashima
    Journal of Applied Physics 95, 8130-8135 (2004).
  37. Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence
    I.-T. Bae, M. Ishimaru, Y. Hirotsu, and K. E. Sickafus
    Journal of Applied Physics 96, 1451-1457 (2004).
  38. Structural relaxation of amorphous silicon-germanium alloys: Molecular-dynamics study
    M. Ishimaru, M. Yamaguchi, and Y. Hirotsu
    Japanese Journal of Applied Physics 43, 7966-7970 (2004).
  39. Electron field emission from GaN nanorod films grown on Si substrates with native silicon oxides
    T. Yamashita, S. Hasegawa, S. Nishida, M. Ishimaru, Y. Hirotsu, and H. Asahi
    Applied Physics Letters 86, 082109-1-082109-3 (2005).
  40. Structural characterization of Cu-Ti-based bulk metallic glass by advanced electron microscopy
    M. Ishimaru, Y. Hirotsu, S. Hata, C. L. Ma, N. Nishiyama, K. Amiya, and A. Inoue
    Philosophical Magazine Letters 85, 125-133 (2005).
  41. Polymorphism in the ferromagnetic GaCrN-diluted magnetic semiconductor: Luminescence and structural investigations
    S. Shanthi, M. Hashimoto, Y. K. Zhou, S. Kimura, M. S. Kim, S. Emura, N. Hasuike, H. Harima, S. Hasegawa, M. Ishimaru, Y. Hirotsu, and H. Asahi
    Journal of Applied Physics 98, 013526-1-013526-8 (2005).
  42. Volume swelling of amorphous SiC during ion-beam irradiation
    M. Ishimaru, I.-T. Bae, A. Hirata, Y. Hirotsu, J. A. Valdez, and K. E. Sickafus
    Physical Review B 72, 024116-1-024116-7 (2005).
  43. Dose dependence of recrystallization processes in amorphous SiC
    I.-T. Bae, M. Ishimaru, and Y. Hirotsu
    Japanese Journal of Applied Physics 44, 6196-6200 (2005).
  44. Identification of soft phonon modes in Ge-Sb-Te using electron diffraction
    M. Naito, M. Ishimaru, Y. Hirotsu, and M. Takashima
    Journal of Applied Physics 98, 034506-1-034506-4 (2005).
  45. Effect of implantation energy and dose on low-dose SIMOX structures
    M. Tamura, K. Tokiguchi, H. Seki, M. Ishimaru, and H. Mori
    Applied Physics A: Materials Science and Processing 81, 1375-1383 (2005).
  46. Transmission electron microscopy study on ion-beam synthesized amorphous Fe-Si thin films
    M. Naito, M. Ishimaru, Y. Hirotsu, J. A. Valdez, and K. E. Sickafus
    Applied Physics Letters 87, 241905-1-241905-3 (2005).
  47. Epitaxial growth of ferromagnetic cubic GaCrN on MgO substrate
    S. Kimura, S. Subashchandran, Y. K. Zhou, M. S. Kim, S. Kobayashi, S. Emura, M. Ishimaru, Y. Hirotsu, S. Hasegawa, and H. Asahi
    Japanese Journal of Applied Physics 45, 76-78 (2006)
  48. Formation process of b-FeSi2/Si heterostructure in high-dose Fe ion implanted Si
    M. Ishimaru, K. Omae, I.-T. Bae, M. Naito, Y. Hirotsu, J. A. Valdez, and K. E. Sickafus
    Journal of Applied Physics 99, 113527-1-113527-7 (2006).
  49. Solid phase crystallization of amorphous Fe-Si layers synthesized by ion implantation
    M. Naito, M. Ishimaru, Y. Hirotsu, J. A. Valdez, and K. E. Sickafus
    Applied Physics Letters 88, 251904-1-251904-3 (2006).
  50. Transmission electron microscopy study on FeSi2 nanoparticles synthesized by electron-beam evaporation
    J. H. Won, K. Sato, M. Ishimaru, and Y. Hirotsu
    Journal of Applied Physics 100, 014307-1-014307-6 (2006).
  51. Annealing effect on structural defects in low-dose separation-by-implanted-oxygen wafers
    M. Tamura, M. Ishimaru, K. Hinode, K. Tokiguchi, H. Seki, and H. Mori
    Japanese Journal of Applied Physics 45, 7592-7599 (2006).
  52. Synthesis of iron silicides by electron-beam evaporation: Effects of substrate pre-baking temperature and Fe deposition thickness
    J. H. Won, K. Sato, M. Ishimaru, and Y. Hirotsu
    Japanese Journal of Applied Physics 46, 732-737 (2007).
  53. Radiation-induced amorphization resistance and radiation tolerance in structurally related oxides
    K. E. Sickafus, R. W. Grimes, J. A. Valdez, A. Cleave, M. Tang, M. Ishimaru, S. M. Corish, C. R. Stanek, and B. P. Uberuaga
    Nature Materials 6, 217-223 (2007).
  54. Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC
    I.-T. Bae, W. J. Weber, M. Ishimaru, and Y. Hirotsu
    Applied Physics Letters 90, 121910-1-121910-3 (2007).
  55. Surface sputtering in high-dose Fe ion implanted Si
    M. Ishimaru
    Nuclear Instruments and Methods in Physics Research B 258, 490-492 (2007).
  56. Ion-beam-induced phase transformations in d-Sc4Zr3O12
    M. Ishimaru, Y. Hirotsu, M. Tang, J. A. Valdez, and K. E. Sickafus
    Journal of Applied Physics 102, 063532-1-063532-7 (2007).
  57. Formation processes of iron silicide nanoparticles studied by ex situ and in situ transmission electron microscopy
    J. H. Won, A. Kovács, M. Naito, M. Ishimaru, and Y. Hirotsu
    Journal of Applied Physics 102, 103512-1-103512-7 (2007).
  58. Ionization-induced effects in amorphous apatite at elevated temperatures
    I.-T. Bae, Y. Zhang, W. J. Weber, M. Ishimaru, Y. Hirotsu, and M. Higuchi
    Journal of Materials Research 23, 962-967 (2008).
  59. Low temperature thermal annealing-induced a-FeSi2 derived phase in an amorphous Si matrix
    M. Naito, M. Ishimaru, Y. Hirotsu, J. A. Valdez, and K. E. Sickafus
    Applied Physics A: Materials Science and Processing 91, 353-356 (2008).
  60. Unexpectedly low thermal conductivity in natural nanostructured bulk Ga2Te3
    K. Kurosaki, H. Matsumoto, A. Charoenphakdee, S. Yamanaka, M. Ishimaru, and Y. Hirotsu
    Applied Physics Letters 93, 012101-1-012101-3 (2008).
  61. Role of the triclinic Al2Fe structure in the formation of the Al5Fe2-approximant
    A. Hirata, Y. Mori, M. Ishimaru, and Y. Koyama
    Philosophical Magazine Letters 88, 491-500 (2008).
  62. Direct observations of thermally induced structural changes in amorphous silicon carbide
    M. Ishimaru, A. Hirata, M. Naito, I.-T. Bae, Y. Zhang, and W. J. Weber
    Journal of Applied Physics 104, 033503-1-033503-5 (2008).
  63. Electron irradiation-induced phase transformation in a-FeSi2
    M. Naito, M. Ishimaru, J. A. Valdez, and K. E. Sickafus
    Journal of Applied Physics 104, 073524-1-073524-6 (2008).
  64. Ni thin films vacuum-evaporated on polyethylene naphthalate substrates with and without the application of magnetic field
    H. Kaiju, A. Ono, N. Kawaguchi, K. Kondo, A. Ishibashi, J. H. Won, A. Hirata, M. Ishimaru, and Y. Hirotsu
    Applied Surface Science 255, 3706-3712 (2009).
  65. Transmission electron microscopy study of an electron-beam-induced phase transformation of niobium nitride
    J. H. Won, J. A. Valdez, M. Naito, M. Ishimaru, and K. E. Sickafus
    Scripta Materialia 60, 799-802 (2009).
  66. Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures
    M. Ishimaru, Y. Tanaka, S. Hasegawa, H. Asahi, K. Sato, and T. J. Konno
    Applied Physics Letters 94, 153103-1-153103-3 (2009).
  67. Damage profile and ion distribution of slow heavy ions in compounds
    Y. Zhang, I.-T. Bae, K. Sun, C. M. Wang, M. Ishimaru, Z. Zhu, W. Jiang, and W. J. Weber
    Journal of Applied Physics 105, 104901-1-104901-12 (2009).
  68. Ion-beam-induced chemical disorder in GaN
    M. Ishimaru, Y. Zhang, and W. J. Weber
    Journal of Applied Physics 106, 053513-1-053513-4 (2009).
  69. Specific surface effect on transport properties of NiO/MgO heterostructured nanowires
    K. Oka, T. Yanagida, K. Nagashima, H. Tanaka, S. Seki, Y. Honsho, M. Ishimaru, A. Hirata, and T. Kawai
    Applied Physics Letters 95, 133110-1-133110-3 (2009).
  70. Effect of periodicity of the two-dimensional vacancy planes on the thermal conductivity of bulk Ga2Te3
    C.-E. Kim, K. Kurosaki, M. Ishimaru, D.-Y. Jung, H. Muta, and S. Yamanaka
    physica status solidi (RRL) 3, 221-223 (2009).
  71. Fabrication of Ni quantum cross devices with a 17 nm junction and their current–voltage characteristics
    H. Kaiju, K. Kondo, A. Ono, N. Kawaguchi, J. H. Won, A. Hirata, M. Ishimaru, Y. Hirotsu, and A. Ishibashi
    Nanotechnology 21, 015301-1-015301-6 (2010).
  72. Damage and microstructure evolution in GaN under Au ion irradiation
    Y. Zhang, M. Ishimaru, J. Jagielski, W. Zhang, Z. Zhu, L. V. Saraf, W. Jiang, L. Thome, and W. J. Weber
    Journal of Physics D: Applied Physics 43, 085303(1)-085303(9) (2010).
  73. Radiation-induced metastable ordered phase in gallium nitride
    M. Ishimaru
    Applied Physics Letters 96, 191908(1)-191908(3) (2010).
  74. Direct observations of Ge2Sb2Te5 recording marks in the phase-change disk
    M. Naito, M. Ishimaru, Y. Hirotsu, R. Kojima, and N. Yamada
    Journal of Applied Physics 107, 103507(1)-103507(5) (2010).
  75. X-ray photoelectron spectroscopy analysis of TlInGaAsN semiconductor system and their annealing induced structural changes
    K. M. Kim, W.-B. Kim, D. Krishnamurthy, M. Ishimaru, H. Kobayashi, S. Hasegawa, and H. Asahi
    Journal of Applied Physics 108, 123524(1)-123524(4) (2010).
  76. Nanovoid formation through the annealing of amorphous Al2O3 and WO3 films
    R. Nakamura, T. Shudo, A. Hirata, M. Ishimaru, and H. Nakajima
    Scripta Materialia 64, 197-200 (2011).
  77. Experimental evidence of homonuclear bonds in amorphous GaN
    M. Ishimaru, Y. Zhang, X. Wang, W.-K. Chu, and W. J. Weber
    Journal of Applied Physics 109, 043512(1)-043512(4) (2011).
  78. High-temperature thermoelectric properties of Cu2Ga4Te7 with defect zinc-blende structure
    T. Plirdpring, K. Kurosaki, A. Kosuga, M. Ishimaru, A. Harnwunggmoung, T. Sugahara, Y. Ohishi, H. Muta, and S. Yamanaka
    Applied Physics Letters 98, 172104(1)-172104(3) (2011).
  79. Nanovoid formation by change in amorphous structure through the annealing of amorphous Al2O3 thin films
    M. Tane, S. Nakano, R. Nakamura, H. Ogi, M. Ishimaru, H. Kimizuka, and H. Nakajima
    Acta Materialia 59, 4631-4640 (2011).
  80. Transmission-electron diffraction by MeV electron pulses
    Y. Murooka, N. Naruse, S. Sakakihara, M. Ishimaru, J. Yang, and K. Tanimura
    Applied Physics Letters 98, 251903(1)-251903(3) (2011).
  81. Enhancement of nanovoid formation in annealed amorphous Al2O3 including W
    R. Nakamura, M. Ishimaru, A. Hirata, K. Sato, M. Tane, H. Kimizuka, T. Shudo, T. J. Konno, and H. Nakajima
    Journal of Applied Physics 110, 064324(1)-064324(7) (2011).
  82. Superlattice-like stacking fault array in ion-irradiated GaN
    M. Ishimaru, I. O. Usov, Y. Zhang, and W. J. Weber
    Philosophical Magazine Letters 92, 49-55 (2012).
  83. Self-elongated growth of nanopores in annealed amorphous Ta2O5 films
    R. Nakamura, K. Tanaka, M. Ishimaru, K. Sato, T. J. Konno, and H. Nakajima
    Scripta Materialia 66, 182-185 (2012).
  84. Read/write characteristics of a new type of bit-patterned-media using nano-patterned glassy alloy
    K. Takenaka, N. Saidoh, N. Nishiyama, M. Ishimaru, M. Futamoto, and A. Inoue
    Journal of Magnetism and Magnetic Materials 324, 1444-1448 (2012).
  85. High-temperature thermoelectric properties of Cu2In4Te7
    T. Plirdpring, K. Kurosaki, A. Kosuga, M. Ishimaru, Y. Ohishi, H. Muta, and S. Yamanaka
    physica status solidi (RRL) 6, 154-156 (2012).
  86. Fabrication of nickel/organic-molecules/nickel nanoscale junctions utilizing thin-film edges and their structural and electrical properties
    H. Kaiju, K. Kondo, N. Basheer, N. Kawaguchi, S. White, A. Hirata, M. Ishimaru, Y. Hirotsu, and A. Ishibashi
    Japanese Journal of Applied Physics 51, 065202(1)-065202(8) (2012).
  87. Effect of the amount of vacancies on the thermoelectric properties of Cu-Ga-Te ternary compounds
    T. Plirdpring, K. Kurosaki, A. Kosuga, M. Ishimaru, A. Harnwunggmoung, T. Sugahara, Y. Ohishi, H. Muta, and S. Yamanaka
    Materials Transactions 53, 1212-1215 (2012).
  88. Enhancement of thermoelectric properties of CoSb3-based skutterudites by double filling of Tl and In
    A. Harnwunggmoung, K. Kurosali, A. Kosuga, M. Ishimaru, T. Plirdpring, R. Yimnirun, J. Jutimoosik, S. Rujirawat, Y. Ohishi, H. Muta, and S. Yamanaka
    Journal of Applied Physics 112, 043509(1)-043509(6) (2012).
  89. Strong atomic ordering in Gd-doped GaN
    M. Ishimaru, K. Higashi, S. Hasegawa, H. Asahi, K. Sato, and T. J. Konno
    Applied Physics Letters 101, 101912(1)-101912(4) (2012).
  90. Nanoscale engineering of radiation tolerant silicon carbide
    Y. Zhang, M. Ishimaru, T. Varga, T. Oda, C. Hardiman, H. Xue, Y. Katoh,S. Shannon, and W. J. Weber
    Physical Chemistry Chemical Physics 14, 13429-13436 (2012).
  91. Direct imaging of atomic clusters in an amorphous matrix: a Co-C granular thin film
    K. Sato, M. Mizuguchi, R. Tang, J.-G. Kang, M. Ishimaru, K. Takanashi, and T. J. Konno
    Applied Physics Letters 101, 191902(1)-191902(3) (2012).
  92. Coherent growth of GaGdN layers with high Gd concentration on GaN(0001)
    K. Higashi, S. Hasegawa, D. Abe, Y. Mitsuno, S. Komori, F. Ishikawa, M. Ishimaru, and H. Asahi
    Applied Physics Letters 101, 221902(1)-221902(4) (2012).
  93. Atomic rearrangements in amorphous Al2O3 under electron-beam irradiation
    R. Nakamura, M. Ishimaru, H. Yasuda, and H. Nakajima
    Journal of Applied Physics 113, 064312(1)-064312(7) (2013).
  94. Origin of radiation tolerance in 3C-SiC with nanolayered planar defects
    M. Ishimaru, Y. Zhang, S. Shannon, and W. J. Weber
    Applied Physics Letters 103, 033104(1)-033104(4) (2013).
  95. Formation of highly oriented nanopores via crystallization of amorphous Nb2O5 and Ta2O5
    R. Nakamura, M. Ishimaru, K. Sato, K. Tanaka, H. Nakajima, and T. J. Konno
    Journal of Applied Physics 114, 124308(1)-124308(6) (2013).
  96. Structure analysis of composition modulation in epitaxially-grown III-V semiconductor alloys
    M. Ishimaru, S. Hasegawa, H. Asahi, K. Sato, and T. J. Konno
    Japanese Journal of Applied Physics 52, 110120(1)-110120(6) (2013).
  97. Ion tracks and microstructures in barium titanate irradiated with swift heavy ions: A combined experimental and computational study
    W. Jiang, R. Devanathan, C. J. Sundgren, M. Ishimaru, K. Sato, T. Varga, S. Manandhar, and A. Benyagoub
    Acta Materialia 61, 7904-7916 (2013).
  98. Thermoelectric properties of Au nanoparticle-supported Sb1.6Bi0.4Te3 synthesized by a g-ray irradiation method
    D. Jung, K. Kurosaki, S. Seino, M. Ishimaru, K. Sato, Y. Ohishi, H. Muta, and S. Yamanaka
    physica status solidi (b) 251, 162-167 (2014).
  99. Ion beam induced epitaxial crystallization of a-Al2O3 at room temperature
    Y. Sina, M. Ishimaru, C. J. McHargue, E. Alves, and K. E. Sickafus
    Nuclear Instruments and Methods in Physics Research B 321, 8-13 (2014).
  100. Stability of amorphous Ta-O nanotubes prepared by anodization: Thermal and structural analyses
    R. Nakamura, K. Asano, M. Ishimaru, K. Sato, M. Takahashi, H. Numakura
    Journal of Materials Research 29, 753-760 (2014).
  101. Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5
    R. Nakamura, T. Toda, S. Tsukui, M. Tane, M. Ishimaru, T. Suzuki, and H. Nakajima
    Journal of Applied Physics 116, 033504(1)-033504(8) (2014).
  102. Ultraviolet Raman spectra of few nanometer thick silicon-on-insulator nanofilms: Lifetime reduction of confined phonons
    V. Poborchii, Y. Morita, M. Ishimaru, and T. Tada
    Applied Physics Letters 105, 153112(1)-153112(4) (2014).
  103. Bottom-up nanostructured bulk silicon: A practical high-efficiency thermoelectric material
    A. Yusufu, K. Kurosaki, Y. Miyazaki, M. Ishimaru, A. Kosuga, Y. Ohishi, H. Muta, and S. Yamanaka
    Nanoscale 6, 13921-13927 (2014).
  104. Corundum-to-spinel structural phase transformation in alumina
    S. Adachi, M. Ishimaru, Y. Sina, C. J. McHargue, K. E. Sickafus, and E. Alves
    Nuclear Instruments and Methods in Physics Research B 358, 136-141 (2015).
  105. Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance
    K. Imada, M. Ishimaru, K. Sato, H. Xue, Y. Zhang, S. Shannon, and W. J. Weber
    Journal of Nuclear Materials 465, 433-437 (2015).
  106. Carrier and heat transport properties of polycrystalline GeSn films on SiO2
    N. Uchida, T. Maeda, R. R. Lieten, S. Okajima, Y. Ohishi, R. Takase, M. Ishimaru, and J.-P. Locquet
    Applied Physics Letters 107, 232105(1)-232105(5) (2015).
  107. Influence of matching field on critical current density and irreversibility temperature in YBa2Cu3O7 films with BaMO3 (M=Zr, Sn, Hf) nanorods
    T. Horide, K. Taguchi, K. Matsumoto, N. Matsukida, M. Ishimaru, P. Mele, and R. Kita
    Applied Physics Letters 108, 082601(1)-082601(5) (2016).
  108. Structural transition in sputter-deposited amorphous germanium films by aging at ambient temperature
    M. Okugawa, R. Nakamura, M. Ishimaru, K. Watanabe, H. Yasuda, and H. Numakura
    Journal of Applied Physics 119, 214309(1)-214309(7) (2016).
  109. Role of nanoscale precipitates for enhancement of thermoelectric properties of heavily P-doped Si-Ge alloys
    A. Yusufu, K. Kurosaki, Y. Miyazaki, M. Ishimaru, A. Kosuga, Y. Ohishi, H. Muta, and S. Yamanaka
    Materials Transactions 57, 1070-1075 (2016).
  110. Amorphization resistance of nano-engineered SiC under heavy ion irradiation
    K. Imada, M. Ishimaru, H. Xue, Y. Zhang, S. Shannon, and W. J. Weber
    Journal of Nuclear Materials 478, 310-314 (2016).
  111. Discovery of Pt based superconductor LaPt5As
    M. Fujioka, M. Ishimaru, T. Shibuya, Y. Kamihara, C. Tabata, H. Amitsuka, A. Miura, M. Tanaka, Y. Takano, H. Kaiju, and J. Nishi
    Journal of the American Chemical Society 138, 9927-9934 (2016).
  112. Crystallization of sputter-deposited amorphous Ge films by electron irradiation: Effect of low-flux pre-irradiation
    M. Okugawa, R. Nakamura, M. Ishimaru, H. Yasuda, and H. Numakura
    Journal of Applied Physics 120, 134308(1)-134308(7) (2016).
  113. Thermal crystallization of sputter-deposited amorphous Ge films: Competition of diamond cubic and hexagonal phases
    M. Okugawa, R. Nakamura, M. Ishimaru, H. Yasuda, and H. Numakura
    AIP Advances 6, 125035(1)-125035(9) (2016).
  114. Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations
    R. Takase, M. Ishimaru, N. Uchida, T. Maeda, K. Sato, R. R. Lieten, and J.-P. Locquet
    Journal of Applied Physics 120, 245304(1)-245304(9) (2016).
  115. アモルファスGeにおける構造緩和過程の分子動力学法による解析
    今林重貴、石丸　学 日本金属学会誌 81, 66-70 (2017).
  116. Pin potential effect on vortex pinning in YBa2Cu3O7-δ films containing nanorods: Pin size effect and mixed pinning
    T. Horide, N. Matsukida, M. Ishimaru, R. Kita, S. Awaji, and K. Matsumoto
    Applied Physics Letters 110, 052601(1)-052601(5) (2017).
  117. Molecular dynamics study on structural relaxation processes in amorphous germanium
    S. Imabayashi and M. Ishimaru
    Materials Transactions 58, 857-861 (2017).
  118. Strong c-axis correlated pinning and hybrid pinning in YBa2Cu3O7-δ films containing BaHfO3 nanorods and stacking faults
    T. Horide, K. Otsubo, R. Kita, N. Matsukida, M. Ishimaru, S. Awaji, and K. Matsumoto
    Superconductor Science and Technology 30, 074009 (8pages) (2017).
  119. Helium irradiation and implantation effects on the structure of amorphous silicon oxycarbide
    Q. Su, S. Inoue, M. Ishimaru, J. Gigax, T. Wang, H. Ding, M. Demkowicz, L. Shao, and M. Nastasi
    Scientific Reports 7, 3900 (8 pages) (2017).
  120. Low-temperature synthesis of crystalline GeSn with high Sn concentration by electron excitation effect
    T. Kimura, M. Ishimaru, M. Okugawa, R. Nakamura, and H. Yasuda
    Japanese Journal of Applied Physics 56, 100307 (3 pages) (2017).
  121. Formation of metastable phases in Zr-ion-irradiated Al2O3 upon thermal annealing
    N. Oka, M. Ishimaru, M. Tane, Y. Sina, C. J. McHargue, K. E. Sickafus, and E. Alves
    Microscopy 66, 388–396 (2017).
  122. Proton-driven intercalation and ion substitution utilizing solid-state electrochemical reaction
    M. Fujioka, C. B. Wu, N. Kubo, C. Y. Zhao, A. Inoishi, S. Okada, S. Demura, H. Sakata, M. Ishimaru, H. Kaiju, and J. Nishii
    Journal of the American Chemical Society 139, 17987–17993 (2017).
  123. Geometric and compositional factors on critical current density in YBa2Cu3O7-d films containing nanorods
    T. Horide, S. Nagao, R. Izutsu, M. Ishimaru, R. Kita, and K. Matsumoto
    Superconductor Science and Technology 31, 065012 (8 pages) (2018).
  124. Molecular-dynamics simulations of solid phase epitaxy in silicon: Effects of system size, simulation time, and ensemble
    K. Kohno and M. Ishimaru
    Japanese Journal of Applied Physics 57, 095503 (7 pages) (2018).
  125. Structure of crystallized particles in sputter-deposited amorphous germanium films
    M. Okugawa, R. Nakamura, A. Hirata, M. Ishimaru, H. Yasuda, and H. Numakura
    Journal of Applied Crystallography 51, 1467-1473 (2018).
  126. Chalcopyrite ZnSnSb2: A promising thermoelectric material
    A. Nomura, S. Choi, M. Ishimaru, A. Kosuga, T. Chasapis, S. Ohno, G. J. Snyder, Y. Ohishi, H. Muta, S. Yamanaka, and K. Kurosaki
    ACS Applied Materials and Interfaces 10, 43682-43690 (2018).
  127. Non-local self-organization of long stacking faults from highly strained nanocomposite film of complex oxide
    T. Horide, M. Ishimaru, K. Sato, and K. Matsumoto
    Physical Review Materials 3, 013403 (7 pages) (2019).
  128. Compositional effects on radiation tolerance of amorphous silicon oxycarbide
    S. Mizuguchi, S. Inoue, M. Ishimaru, Q. Su, and M. Nastasi
    Journal of Nuclear Materials 518, 241-246 (2019).
  129. Direct observations of crystallization processes of amorphous GeSn during thermal annealing: A temperature window for suppressing Sn segregation
    M. Higashiyama, M. Ishimaru, M. Okugawa, and R. Nakamura
    Journal of Applied Physics 125, 175703 (8 pages) (2019).
  130. Observation of inhomogeneous depinning in YBa2Cu3O7 composite multilayers
    T. Horide, M. Ishimaru, and K. Matsumoto
    Superconductor Science and Technology 32, 085001 (8 pages) (2019).
  131. Thermoelectric property in orthorhombic-domained SnSe film
    T. Horide, Y. Murakami, Y. Hirayama, M. Ishimaru, and K. Matsumoto
    ACS Applied Materials and Interfaces 11, 27057-27063 (2019).
  132. 成膜温度を変化させて作製したYBa2Cu3O7+BaHfO3薄膜の磁束ピンニング特性
    堀出朋哉、鳥越健太、喜多隆介、中村亮太、石丸　学、淡路　智、松本　要
    日本金属学会誌 83, 320-326 (2019).
  133. スパッタリング法によるアモルファスFe-B合金薄膜の作製と透過型電子顕微鏡による構造解析
    仲村龍介、半谷祐樹、石丸　学、和田　武
    鉄と鋼 105, 1017-1021 (2019).
  134. Application of the Tersoff interatomic potential to pressure-induced polyamorphism of silicon
    R. Mukuno and M. Ishimaru
    Japanese Journal of Applied Physics 58, 101006 (4 pages) (2019).
  135. Carrier and heat transport properties of poly-crystalline GeSn films for thin-film transistor applications
    N. Uchida, J. Hattori, R. R. Lieten, Y. Ohishi, R. Takase, M. Ishimaru, K. Fukuda, T. Maeda, and J.-P. Locquet
    Journal of Applied Physics 126, 145105 (8 pages) (2019).
  136. Deposition-temperature dependence of vortex pinning property in YBa2Cu3O7+BaHfO3 films
    T. Horide, K. Torigoe, R. Kita, M. Ishimaru, S. Awaji, and K. Matsumoto
    Materials Transactions 61, 449-454 (2020).
  137. Liquid-mediated crystallization of amorphous GeSn under electron beam irradiation
    K. Inenaga, R. Motomura, M. Ishimaru, R. Nakamura, and H. Yasuda
    Journal of Applied Physics 127, 205304 (9 pages) (2020).
  138. Dual crystallization modes of sputter-deposited amorphous SiGe films
    M. Okugawa, R. Nakamura, H. Numakura, M. Ishimaru, and H. Yasuda
    Journal of Applied Physics 128, 015303 (9 pages) (2020).
  139. Effects of hydrogen on structure and crystallization behavior of sputter-deposited amorphous germanium films
    Y. Hanya, R. Nakamura, M. Okugawa, M. Ishimaru, G. Oohata, and H. Yasuda
    Japanese Journal of Applied Physics 59, 075506 (7 pages) (2020).
  140. Simultaneous achievement of high Jc and suppressed Jc anisotropy by hybrid pinning in YBa2Cu3O7 three-phase-nanocomposite film
    T. Horide, K. Torigoe, M. Ishimaru, R. Kita, S. Awaji, and K. Matsumoto
    Superconductor Science and Technology 33, 105003 (8 pages) (2020).
  141. Combined effect of nanorod and stacking fault for improving nanorod interface in YBa2Cu3O7-δ nanocomposite films
    T. Horide, M. Ishimaru, K. Sato, and K. Matsumoto
    Superconductor Science and Technology 33, 115001 (10 pages) (2020).
  142. Dual-beam irradiation stability of amorphous silicon oxycarbide at 300 and 500 oC (invited)
    Q. Su, G. Greaves, S. E. Donnelly, S. Mizuguchi, M. Ishimaru, and M. Nastasi
    JOM 72, 4002–4007 (2020).
  143. Nanostructures and flux pinning properties in YBa2Cu3O7-y thin films with double perovskite Ba2LuNbO6 nanorods
    M. Gondo, M. Yoshida, Y. Yoshida, M. Ishimaru, T. Horide, K. Matsumoto, and R. Kita
    Journal of Applied Physics 129, 195301 (8 pages) (2021).
  144. Explosive crystallization of sputter-deposited amorphous germanium films by irradiation with an electron beam of SEM-level energies
    R. Nakamura, A. Matsumoto, and M. Ishimaru
    Journal of Applied Physics 129, 215301 (6 pages) (2021).
  145. Thermoelectric property of n-type bismuth-doped SnSe film: Influence of characteristic film defect
    T. Horide, K. Nakamura, Y. Hirayama, K. Morishita, M. Ishimaru, and K. Matsumoto
    ACS Applied Energy Materials 4, 9563-9571 (2021).
  146. Enhancement of thermoelectric properties of n-type Bi2Te3-xSex by energy filtering effect
    Y. Kawajiri, S.-A. Tanusilp, M. Kumagai, M. Ishimaru, Y. Ohishi, J. Tanaka, and K. Kurosaki
    ACS Applied Energy Materials 4, 11819–11826 (2021).
  147. Electron diffraction radial distribution function analysis of amorphous boron carbide synthesized by ion beam irradiation and chemical vapor deposition
    M. Ishimaru, R. Nakamura, Y. Zhang, W. J. Weber, G. G. Peterson, N. J. Ianno, and M. Nastasi
    Journal of the European Ceramic Society 42, 376-382 (2022).
  148. Aligned self-organization induced by epitaxial stress and shear deformation in Jahn-Teller spinel ZnMnGaO4
    T. Horide, K. Morishita, Y. Horibe, M. Usuki, M. Ishimaru, and K. Matsumoto
    The Journal of Physical Chemistry C 126, 806–814 (2022).
  149. Impact of annealing on electric and elastic properties of 10-nm Hf0.5Zr0.5O2 films prepared on Si by sputtering
    L. Bolotov, S. Migita, R. Fujio, M. Ishimaru, S. Hatayama, and N. Uchida
    Microelectronic Engineering 258, 111770 (10 pages) (2022).
  150. Self-organized nanocomposite structure controlled by elemental site occupancy for improving vortex pinning in YBa2Cu3O7 superconducting films
    T. Horide, Y. Yoshida, R. Kita, M. Gondo, M. Ishimaru, and K. Matsumoto
    ACS Applied Electronic Materials 4, 3018-3026 (2022).
  151. Anomalous structural phase transformation in swift heavy ion-irradiated δ-Sc4Hf3O12
    M. Iwasaki, Y. Kanazawa, D. Manago, M. K. Patel, G. Baldinozzi, K. E. Sickafus, and M. Ishimaru
    Journal of Applied Physics 132, 075901 (8 pages) (2022).
  152. Investigation of nanoscale phase formation in rapidly solidified Fe20Co20Ni20Cr20B20-xSix alloys
    Y. Zhang, K. Inoue, M. Ishimaru, T. Tokunaga, and H. Era
    Materials Transactions 63, 1211-1216 (2022).

Proceedings

  1. An electron diffraction study of superconducting oxides BaPb1-xBixO3 and Ba1-xKxBiO3
    Y. Koyama and M. Ishimaru
    Proceedings of the XIIth International Congress for Electron Microscopy, vol. 4, 82-83 (1990).
  2. Structural transitions in Ba1-xMxBiO3 (M=K, Rb)
    S. Nakamura, Y. Koyama, and M. Ishimaru
    Physica C 185-189, 695-696 (1991).
  3. Monte Carlo simulation of long-range ordering in (001) epitaxial growth of alloy semiconductors
    S. Matsumura, K. Takano, M. Ishimaru, N. Kuwano, and K. Oki
    10th Symposium Record of Alloy Semiconductor Physics and Electronics, 185-192 (1991).
  4. Analysis of L11 ordering process in III-V semiconductor alloys with surface step by the Ising model for epitaxial growth
    M. Ishimaru, S. Matsumura, N. Kuwano, and K. Oki
    11th Symposium Record of Alloy Semiconductor Physics and Electronics, 189-194 (1992).
  5. Atomic ordering and clustering in the epitaxial growth of III-V semiconductor alloys studied by Monte Carlo simulations
    M. Ishimaru, S. Matsumura, N. Kuwano, and K. Oki
    Computer Aided Innovation of New Materials II, 367-370 (1993).
  6. Structural transitions in BKB and BRB
    S. Nakamura, Y. Koyama, and M. Ishimaru
    Phase Transitions 41, 243-247 (1993).
  7. Monte Carlo simulation of L11-type ordering due to surface step migration in the epitaxial growth of III-V semiconductor alloys
    M. Ishimaru, S. Matsumura, N. Kuwano, and K. Oki
    Journal of Crystal Growth 128, 499-502 (1993).
  8. Domain structure of CuPt-type ordered phase in III-V semiconductor alloys
    M. Ishimaru, S. Matsumura, N. Kuwano, and K. Oki
    12th Symposium Record of Alloy Semiconductor Physics and Electronics, 99-104 (1993).
  9. Monte Carlo simulation of CuAu-I type ordering during (001) epitaxial growth of III-V semiconductor alloys
    M. Ishimaru, S. Matsumura, N. Kuwano, and K. Oki
    13th Symposium Record of Alloy Semiconductor Physics and Electronics, 125-128 (1994).
  10. Macrodefect formation in semiconductors during high energy ion implantation: Monte Carlo simulation of damage depth distributions
    S.A. Fedotov, V.S. Varichenko, A.M. Zaitsev, M. Ishimaru, Y. Hiroyama, and T. Motooka
    Materials Science and Engineering B 29, 202-205 (1995).
  11. Molecular dynamics simulation of stable defect formation in Si via Coulomb explosion
    S.A. Fedotov, M. Ishimaru, Y. Hiroyama, T. Motooka, and A.M. Zaitsev
    Nuclear Instruments and Methods in Physics Research B 118, 724-727 (1996).
  12. Amorphization and solid phase epitaxy of high-energy ion implanted 6H-SiC
    M. Ishimaru, S. Harada, T. Motooka, T. Nakata, T. Yoneda, and M. Inoue
    Nuclear Instruments and Methods in Physics Research B 127/128, 195-197 (1997).
  13. Defects formation during crystal growth from melted silicon
    T. Motooka, M. Ishimaru, and S. Munetoh
    Proceedings of the Second Symposium on Atomic-Scale Surface and Interface Dynamics, 91-96 (1998).
  14. Dose dependence of recrystallization process in MeV Si implanted 6H-SiC
    S. Harada, M. Ishimaru, T. Motooka, T. Nakata, T. Yoneda, and M. Inoue
    Proceedings of The Asian Science Seminar on New Direction in Transmission Electron Microscopy and Nano-characterization of Materials, 317-321 (1998).
  15. Microstructural and compositional characterization of SiC-on-insulator structures
    M. Ishimaru, R.M. Dickerson, and K.E. Sickafus
    Proceedings of Microscopy and Microanalysis 99, 770-771 (1999).
  16. Molecular dynamics simulations of crystal growth from melted silicon: Defect formation processes
    M. Ishimaru and T. Motooka
    Proceedings of Materials Research Society Symposium 538 “Symposium J - Multiscale Modelling of Materials”, 247-250 (1999).
  17. Microstructural evolution of oxygen implanted silicon during annealing processes
    M. Ishimaru, T. Tsunemori, S. Harada, M. Arita, and T. Motooka
    Nuclear Instruments and Methods in Physics Research B 148, 311-316 (1999).
  18. Damage evolution in Xe-ion irradiated rutile (TiO2) single crystals
    F. Li, M. Ishimaru, P. Lu, I.V. Afanasyev-Charkin, and K.E. Sickafus
    Nuclear Instruments and Methods in Physics Research B 166/167, 314-321 (2000).
  19. Ion beam synthesis of buried oxide layers in silicon carbide
    M. Ishimaru, R.M. Dickerson, and K.E. Sickafus
    Nuclear Instruments and Methods in Physics Research B 166/167, 390-394 (2000).
  20. Effect of He+ ion implantation on optical and structural properties of MgAl2O4
    I.V. Afanasyev-Charkin, D.W. Cooke, V.T. Gritsyna, M. Ishimaru, and K.E. Sickafus
    Vacuum 58, 2-9 (2000).
  21. Atomistic simulations of defect formation processes during crystallization of melted silicon
    M. Ishimaru TMS Conference Proceedings, EPD Congress 2001, 327-357 (2001).
  22. Atomic-scale structures of amorphous silicon: A molecular-dynamics study
    M. Ishimaru
    Proceedings of the 25th International Conference on the Physics of Semiconductors, 1483-1484 (2001).
  23. Optical and ion channeling analyses of point defect accumulation in spinel and cubic zirconia due to ion irradiation
    I.V. Afanasyev-Charkin, V.T. Gtitsyna, D.W. Cooke, M. Ishimaru, B.L. Bennett, and K.E. Sickafus
    Proceedings of The Fourth Pacific Rim International Conference on Advanced Materials and Processing, vol. 2, 2967-2969 (2001).
  24. Amorphous structures of buried oxide layer in SiC-on-insulator wafer (invited)
    M. Ishimaru
    Journal of Electronic Materials 30, 1489-1492 (2001).
  25. Application of nano-diffraction to local atomic distribution function analysis of amorphous materials (invited)
    Y. Hirotsu, M. Ishimaru, T. Ohkubo, T. Hanada, and M. Sugiyama
    Journal of Electron Microscopy 50, 435-442 (2001).
  26. lectron-irradiation-induced amorphization in 6H-SiC by 300 keV transmission electron microscopy equipped with a field emission gun
    I.-T. Bae, M. Ishimaru, and Y. Hirotsu
    Materials Science Forum 389-393 “Silicon Carbide and Related Materials 2001”, 467-470 (2002).
  27. In situ x-ray diffraction analysis of disorder and strain in ion implanted ceramic thin films
    S. Grigull, M. Ishimaru, M. Nastasi, C.A. Zorman, and M. Mehreguny
    Advances in X-ray Analysis 44, 308-313 (2002).
  28. Atomistic structures of Ge-Sb-Te thin film
    M. Naito, M. Ishimaru, T. Ohkubo, Y. Hirotsu, and M. Takashima
    Proceedings of the 15th International Congress for Electron Microscopy, vol. 1, 981-982 (2002).
  29. Characterization of Fe-based L10-type ordered alloy nanoparticles (invited)
    Y. Hirotsu, K. Sato, and M. Ishimaru
    Proceedings of Seminar on Nanotechnology for Fabrication of Hybrid Materials and 4th Japanese-Polish Joint Seminar on Materials Analysis 29-32 (2002).
  30. Amorphous structure of phase change optical recording media Ge-Sb-Te thin film
    M. Naito, M. Ishimaru, Y. Hirotsu, and M. Takashima
    Proceedings of Seminar on Nanotechnology for Fabrication of Hybrid Materials and 4th Japanese-Polish Joint Seminar on Materials Analysis 93-96 (2002).
  31. Characterization of ion-beam-induced amorphous structures by advanced electron microscopy
    M. Ishimaru, I.-T. Bae, T. Ohkubo, Y. Hirotsu, and K.E. Sickafus
    Nuclear Instruments and Methods in Physics Research B 190, 882-886 (2002).
  32. Transmission electron microscopy study on ion-beam-induced amorphous SiC
    I.-T. Bae, M. Ishimaru, Y. Hirotsu, S. Matsumura, and K.E. Sickafus
    Proceedings of the 6th Seminar on Core University Program between Japan and Korea, 123 (2002).
  33. Ion dose dependence on solid phase epitaxy of amorphous silicon carbide induced by ion implantation
    I.-T. Bae, M. Ishimaru, and Y. Hirotsu
    Proceedings of Materials Research Society Symposium 742 “Symposium K - Silicon Carbide - Materials, Processing, and Devices”, 67-72 (2003).
  34. Radial distribution functions of amorphous silicon carbide
    M. Ishimaru, I.-T. Bae, and Y. Hirotsu
    Proceedings of Materials Research Society Symposium 742 “Symposium K - Silicon Carbide - Materials, Processing, and Devices”, 73-77 (2003).
  35. Effects of additive element and particle size on the atomic ordering temperature of L10-FePt nanoperticles
    K. Sato, M. Fujiyoshi, M. Ishimaru, and Y. Hirotsu
    Scripta Materialia 48, 921-927 (2003).
  36. Effects of surface step and substrate temperature on microstructure of L10-FePt nanoparticles
    K. Sato, T. Kajiwara, M. Fujiyoshi, M. Ishimaru, Y. Hirotsu, and T. Shinohara
    Journal of Applied Physics 93, 7414-7416 (2003).
  37. Ion-beam-induced amorphous structures in silicon carbide
    I.-T. Bae, M. Ishimaru, Y. Hirotsu, S. Matsumura, and K.E. Sickafus
    Nuclear Instruments and Methods in Physics Research B 206, 974-978 (2003).
  38. Amorphous structures of silicon carbonitride formed by high-dose nitrogen ion implantation into silicon carbide
    M. Ishimaru, M. Naito, Y. Hirotsu, and K.E. Sickafus
    Nuclear Instruments and Methods in Physics Research B 206, 994-998 (2003).
  39. Electron diffraction structure analysis for amorphous materials (invited)
    Y. Hirotsu, T. Ohkubo, I.-T. Bae, and M. Ishimaru
    Materials Chemistry and Physics 81, 360-363 (2003).
  40. Structural analysis of as-sputterd and melt-quenched Ge-Sb-Te thin film
    M. Naito, M. Ishimaru, Y. Hirotsu, and M. Takashima
    Proceedings of 8th Asia-Pacific Conference on Electron Microscopy, 608-609 (2004).
  41. Effects of amorphous structures on recrystallization of silicon carbide
    I.-T. Bae, M. Ishimaru, Y. Hirotsu and K. E. Sickafus
    Proceedings of 8th Asia-Pacific Conference on Electron Microscopy, 694-695 (2004).
  42. Epitaxially-grown a-FeSi2 nano-particle synthesized by electron beam deposition
    J. H. Won, K. Sato, M. Ishimaru and Y. Hirotsu
    Proceedings of 8th Asia-Pacific Conference on Electron Microscopy, 813-814 (2004).
  43. Fabrication and characterization of FeSi2 nanoparticles on Si(100) substrate
    J. H. Won, K. Sato, M. Ishimaru and Y. Hirotsu
    Proceedings of the International Conference on New Frontiers of Process Science and Engineering in Advanced Materials, 47-51 (2004).
  44. Atomistic structures of amorphous Si1-xGex alloys: A molecular-dynamics study
    M. Yamaguchi, M. Ishimaru, and Y. Hirotsu
    Transactions of the Materials Research Society of Japan 29, 3771-3774 (2004).
  45. Local structural change of amorphous Ge-Sb-Te thin film on annealing
    M. Naito, M. Ishimaru, Y. Hirotsu, and M. Takashima
    Journal of Non-Crystalline Solids 345/346, 112-115 (2004).
  46. Chemical short range order in ion-beam-induced amorphous SiC: Irradiation temperature dependence
    M. Ishimaru, I.-T. Bae, A. Hirata, Y. Hirotsu, J. A. Valdez, and K. E. Sickafus
    Nuclear Instruments and Methods in Physics Research B 242, 473-475 (2006).
  47. Structural characterization of iron silicides nanoparticles grown on Si substrate: Annealing rate dependence
    J. H. Won, K. Sato, M. Ishimaru, and Y. Hirotsu
    Journal of Materials Science 41, 2611-2614 (2006).
  48. Structural investigation of Ge-Sb-Sn thin film using transmission electron microscopy
    M. Naito, M. Ishimaru, Y. Hirotsu, M. Takashima, and H. Matsumoto
    Journal of Materials Science 41, 2615-2619 (2006).
  49. Structural characterization of amorphous Fe-Si and its recrystallized layers
    M. Naito, M. Ishimaru, Y. Hirotsu, J. A. Valdez, and K. E. Sickafus
    Nuclear Instruments and Methods in Physics Research B 250, 283-286 (2006).
  50. Structural evolution in Fe ion implanted Si upon thermal annealing
    K. Omae, I.-T. Bae, M. Naito, M. Ishimaru, Y. Hirotsu, J. A. Valdez, and K. E. Sickafus
    Nuclear Instruments and Methods in Physics Research B 250, 300-302 (2006).
  51. Electron-beam radial distribution analysis of ion-beam-induced amorphous SiC (invited)
    M. Ishimaru
    Nuclear Instruments and Methods in Physics Research B 250, 309-314 (2006).
  52. Structural changes of SiC under electron-beam irradiation: Temperature dependence
    I.-T. Bae, M. Ishimaru, and Y. Hirotsu
    Nuclear Instruments and Methods in Physics Research B 250, 315-319 (2006).
  53. Amorphous structure of ion-beam-synthesized Fe-Si thin layer
    M. Naito, M. Ishimaru, and Y. Hirotsu
    Proceedings of the 16th International Microscopy Congress 1771 (2006).
  54. High-dose Fe ion implanted Si: Ion-beam-induced and annealing-induced microstructures
    M. Ishimaru, K. Omae, I.-T. Bae, M. Naito, and Y. Hirotsu
    Proceedings of the 16th International Microscopy Congress 1856 (2006).
  55. Exchange interactions in hydrogen-induced amorphous YFe2 (invited)
    K. Suzuki, K. Ishikawa, K. Aoki, J. M. Cadogan, M. Ishimaru, and Y. Hirotsu
    Journal of Non-Crystalline Solids 353, 748-752 (2007).
  56. Post-annealing recrystallization and damage recovery process in Fe ion implanted Si
    M. Naito, A. Hirata, M. Ishimaru, and Y. Hirotsu
    Nuclear Instruments and Methods in Physics Research B 257, 340-343 (2007).
  57. Formation process of sharp-pointed structures on GaN nanorods during RF-MBE growth and their field emission characteristics
    M. Terayama, S. Hasegawa, K. Uchida, M. Ishimaru, Y. Hirotsu, and H. Asahi
    physica status solidi (c) 4, 2371-2374 (2007).
  58. Compositional analyses of ion-irradiation-induced phases in d-Sc4Zr3O12
    K. E. Sickafus, M. Ishimaru, Y. Hirotsu, I. O. Usov, J. A. Valdez, P. Hosemann, A. L. Johnson, and H. T. Thao
    Nuclear Instruments and Methods in Physics Research B 266, 2892-2897 (2008).
  59. Temperature dependence of electron-beam induced effects in amorphous apatite
    I.-T. Bae, Y. Zhang, W. J. Weber, M. Ishimaru, Y. Hirotsu, and M. Higuchi
    Nuclear Instruments and Methods in Physics Research B 266, 3037-3042 (2008).
  60. Structural relaxation in amorphous SiC studied by in situ transmission electron microscopy
    M. Ishimaru, A. Hirata, M. Naito, I.-T. Bae, Y. Zhang, and W. J. Weber
    Proceedings of 9th Asia-Pacific Microscopy Conference 708-709 (2008).
  61. Studies on TlInGaAsN double quantum well structures
    D. Krishnamurthy, M. Ishimaru, M. Ozasa, Y. Tanaka, S. Hasegawa, Y. Hirotsu, and H. Asahi
    Proceedings of the 20th International Conference on Indium Phosphide and Related Materials, WeP10-1 - WeP10-4 (2008).
  62. Structural characterization of metastable iron silicides formed in the Fe ion implanted Si
    M. Naito and M. Ishimaru
    Proceedings of 9th Asia-Pacific Microscopy Conference 822-823 (2008).
  63. MBE growth and characterization of TlInGaAsN double quantum well structures
    D. Krishnamurthy, S. Shanthi, K. M. Kim, Y. Sakai, M. Ishimaru, S. Hasegawa, and H. Asahi
    Journal of Crystal Growth 311, 1733-1738 (2009).
  64. Early stage of the crystallization in amorphous Fe-Si layers: Formation and growth of metastable a-FeSi2
    M. Naito and M. Ishimaru
    Nuclear Instruments and Methods in Physics Research B 267, 1290-1293 (2009).
  65. Spontaneous formation of ultra-short-period lateral composition modulation in TlInGaAsN/TlInP structures
    M. Ishimaru, Y. Tanaka, S. Hasegawa, H. Asahi, K. Sato, and T. J. Konno
    Proceedings of the 21st International Conference on Indium Phosphide and Related Materials, 253-254 (2009).
  66. Improvement in luminescence properties of TlInGaAsN/TlInP multi-layers grown by gas source molecular beam epitaxy
    Y. Tanaka, S. Hasegawa, J.Q. Liu, M. Ishimaru, and H. Asahi
    Proceedings of the 21st International Conference on Indium Phosphide and Related Materials, 259-262 (2009).
  67. Influence of native silicon oxides on the growth of GaN nanorods on Si(001)
    S. Hasegawa, J.-U. Seo, K. Uchida, H. Tambo, H. Kameoka, M. Ishimaru, and H. Asahi
    physica status solidi (c) 6, S570-S573 (2009).
  68. Thermoelectric characterization of (Ga,In)2Te3 with self-assembled two-dimensional vacancy planes
    S. Yamanaka, M. Ishimaru, A. Charoenphakdee, H. Matsumoto, and K. Kurosaki
    Journal of Electronic Materials 38, 1392-1396 (2009).
  69. Irradiation-induced amorphous structures studied by electron diffraction radial distribution function analysis
    M. Ishimaru, M. Naito, and A. Hirata
    Proceedings of Microscopy and Microanalysis 2009, 1346-1347 (2009).
  70. Electron microscopy study of L10-FePtCu nanoparticles synthesized at 613K
    Y. Hirotsu, H. W. Ryu, K. Sato, and M. Ishimaru
    Journal of Microscopy 236, 94-99 (2009).
  71. Formation process of b-FeSi2 from amorphous Fe-Si synthesized by ion implantation: Fe concentration dependence
    M. Naito and M. Ishimaru
    Journal of Microscopy 236, 123-127 (2009).
  72. Synthesis and characterization of Gd-doped InGaN thin films and superlattice structure
    S. N. M. Tawil, D. Krishnamurthy, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa, and H. Asahi
    Proceedings of 3rd IEEE International NanoElectronics Conference, 1163-1164 (2010).
  73. Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials
    H. Kaiju, K. Kondo, N. Basheer, N. Kawaguchi, S. White, A. Hirata, M. Ishimaru, Y. Hirotsu, and A. Ishibashi
    Proceedings of Materials Research Society Symposium 1252 “Symposia I/J - Materials and Devices for End-of-Roadmap and Beyond CMO's Scaling”, J02081-J02086 (2010).
  74. Naturally-formed nanoscale phase separation in epitaxially-grown III-V semiconductor alloys
    M. Ishimaru, Y. Tanaka, S. Hasegawa, H. Asahi, K. Sato, and T. J. Konno
    Proceedings of Microscopy and Microanalysis 2010, 1470-1471 (2010).
  75. Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE
    S. N. M. Twail, D. Krishnamurthy, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa, and H. Asahi
    physica status solidi (c) 8, 491-493 (2011).
  76. Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy
    D. Krishnamurthy, S. N. M. Tawil, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa, and H. Asahi
    physica status solidi (c) 8, 497-499 (2011).
  77. Effect of vacancy distribution on the thermal conductivity of Ga2Te3 and Ga2Se3
    C.-E. Kim, K. Kurosaki, M. Ishimaru, H. Muta, and S. Yamanaka
    Journal of Electronic Materials 40, 999-1004 (2011).
  78. Annealing-induced structural changes in TlInGaAsN heterostructures studied by X-ray photoelectron spectroscopy
    K. M. Kim, W. B. Kim, D. Krishnamurthy, M. Ishimaru, H. Kobayashi, S. Hasegawa and H. Asahi
    Proceedings of the 23rd International Conference on Indium Phosphide and Related Materials, 110-113 (2011).
  79. Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN structures
    D. Krishnamurthy, S. N. M. Tawil, R. Kakimi, M. Ishimaru, S. Emura, Y.-K Zhou, S. Hasegawa, and H. Asahi
    physica status solidi (c) 8, 2245-2247 (2011).
  80. Radiation-induced chemical disorder in covalent materials
    M. Ishimaru, Y. Zhang, and W. J. Weber
    Proceedings of Materials Research Society Symposium 1298 “Symposia Q/R/T - Advanced Materials for Applications in Extreme Environments” mrsf10-1298-r03-01 (2011).
  81. TEM analysis on nanovoid formation in annealed amorphous oxides
    R. Nakamura, T. Shudo, A. Hirata, M. Ishimaru, and H. Nakajima
    Materials Science Forum 695 “Eco-Materials Processing and Design XII”, 541-544 (2011).
  82. Growth of higher manganese silicides from amorphous manganese-silicon layers synthesized by ion implantation
    M. Naito, R. Nakanishi, N. Machida, T. Shigematsu, M. Ishimaru, J. A. Valdez, and K. E. Sickafus
    Nuclear Instruments and Methods in Physics Research B 272, 446-449 (2012).
  83. Elastic properties of nanoporous amorphous Al2O3
    M. Tane, S. Nakano, R. Nakamura, H. Ogi, M. Ishimaru, H. Kimizuka, and H. Nakajima
    Proceedings of the 7th International Conference on Porous Metals and Metallic Foams, 649-652 (2012).
  84. Electron diffraction study on chemical short-range order in covalent amorphous solids (invited)
    M. Ishimaru, A. Hirata, and M. Naito
    Nuclear Instruments and Methods in Physics Research B 277, 70-76 (2012).
  85. Surface and cross sectional nano-structure of prototype BPM prepared using imprinted glassy alloy thin film
    N. Saidoh, K. Takenaka, N. Nishiyama, M. Ishimaru, and A. Inoue
    Intermetallics 30, 48-50 (2012).
  86. Novel soft-magnetic underlayer of a bit-patterned media using CoFe-based amorphous alloy thin film
    K. Takenaka, N. Saidoh, N. Nishiyama, M. Ishimaru, and A. Inoue
    Intermetallics 30, 100-103 (2012).
  87. Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001)
    S. Sano, S. Hasegawa, Y. Mitsuno, K. Higashi, M. Ishimaru, T. Sakurai, H. Ohta, and H. Asahi
    Journal of Crystal Growth 378, 314-318 (2013).
  88. Competing effects of electronic and nuclear energy loss on microstructural evolution in ionic-covalent materials (invited)
    Y. Zhang, T. Varga, M. Ishimaru, P. D. Edmondson, H. Xue, P. Liu, S. Moll, F. Namavar, C. Hardiman, S. Shannon, and W. J. Weber
    Nuclear Instruments and Methods in Physics Research B 327, 33-43 (2014).
  89. Atomic structure imaging of Co clusters in Co-C granular thin films by high-resolution transmission electron microscopy
    K. Sato, M. Mizuguchi, J.-G. Kang, M. Ishimaru, K. Takanashi, and T. J. Konno
    AMTC Letters 4, 162-163 (2014).
  90. Crystallization processes of amorphous GeSn thin films by heat treatment and electron beam irradiation
    T. Kimura, M. Ishimaru, M. Okugawa, R. Nakamura, and H. Yasuda
    Microscopy and Microanalysis 23 (Supplement 1), 2046-2047 (2017).
  91. Inhomogeneous crystallization of sputter-deposited amorphous Ge films
    R. Nakamura, M. Okugawa, M. Ishimaru, H. Yasuda, and H. Numakura
    Proceedings of 24th International Workshop on Active-Matrix Flatpanel Displays and Devices 8006150, 276-278 (2017).
  92. Synthesis of high Sn concentration GeSn by recrystallization of amorphous phase
    M. Higashiyama, M. Ishimaru, M. Okugawa, and R. Nakamura
    Proceedings of Materials Science and Technology 2018, 284-287 (2018).
  93. Large-scale molecular-dynamics simulations of solid phase epitaxy in Si
    K. Kohno and M. Ishimaru
    Proceedings of Materials Science and Technology 2018, 300-303 (2018).
  94. Effects of temperatures on pressure-induced structural changes in amorphous Si: A molecular-dynamics study
    R. Mukuno and M. Ishimaru
    Proceedings of International Symposium on Applied Science 2019, 3, 118-122 (2020).
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